Electrical charges storage device having enhanced power characteristics

ABSTRACT

The present invention relates generally to an electrical charge storage device (ECSD) with enhanced power characteristics. More particularly, the present invention relates to enhancing the current density, voltage rating, power transfer characteristics, frequency response and charge storage density of various devices, such as capacitors, batteries, fuel cells and other electrical charge storage devices. For example, one aspect of the present invention is solid state and electrolytic capacitors where the conductor surface area is increased with smooth structures, thereby reducing the distance separating the conductors, and improving the effective dielectric characteristics by employing construction techniques on atomic, molecular, and macroscopic levels.

RELATED APPLICATIONS

[0001] This application claim priority to U.S. provisional patentapplication S. N. 60/452,266, filed Mar. 5, 2003.

TECHNICAL FIELD

[0002] The present invention relates generally to an electrical chargestorage device (ECSD) with enhanced power characteristics. Moreparticularly, the present invention relates to enhancing the currentdensity, voltage rating, power transfer characteristics, frequencyresponse and charge storage density of various devices, such ascapacitors, batteries, fuel cells and other electrical charge storagedevices. For example, one aspect of the present invention is solid stateand electrolytic capacitors where the conductor surface area isincreased with smooth structures, thereby reducing the distanceseparating the conductors, and improving the effective dielectriccharacteristics by employing construction techniques on atomic,molecular, and macroscopic levels.

BACKGROUND OF THE INVENTION

[0003] Electrical capacitors are electrical charge storage devicescomposed generally of a pair of conductors separated by a dielectricmaterial. Capacitors may be used in both direct current (DC) andalternating current (AC) applications for a variety of purposes,including energy storage, signal coupling, motor starting, motorrunning, power factor correction, voltage regulation, VA efficiency,tuning, resonance, surge suppression, and filtration. In either AC or DCnetworks, capacitors may be arranged in series, shunt, and hybridconfigurations to provide many operational advantages, both transientand steady state. For example, shunt capacitors can serve as currentsources or voltage sources in both AC and DC applications and provideVAR support and power factor correction in AC applications.

[0004] In transient AC networks, capacitors can be used to improve powerfactor during transient conditions, which results in increasedefficiency or other desirable enhancements. Transient applications ofseries capacitors include voltage surge protection, motor starting,current limiting, switching operations, and the like. For example, lowpower factor transient currents are associated with fault currents andinrush currents due to motor starting and transformer magnetization.Series capacitors can moderate these effects by improving overall powerfactor and network voltage regulation during the transient condition. Inaddition, series capacitance can provide a degree of current limitingduring transient conditions as a result of the series impedance of thecapacitor, thus reducing the magnitude of fault currents and, as aresult, reducing generator, transformer, switchgear, bus andtransmission line requirements. Further, mechanical stress associatedwith bringing additional generation capacity on line can be moderated bythe presence of series capacitive coupling. While these and many otherseries capacitor advantages are well known, unit cost, sizerequirements, voltage limitations, current limitations, dv/dtlimitations, di/dt limitations, insulation limitations, dielectriclimitations, electromechanical limitations and thermodynamiclimitations, have prevented widespread implementation of seriescapacitors, especially in low frequency applications.

[0005] Steady state AC network characteristics also can be improvedthrough the incorporation of capacitors. For example, high capacitance,series applications impress a low steady state AC voltage on thecapacitor, which can be beneficial when electrical transfer devices areused in conjunction with series capacitor banks. Similarly, electricalwave distortion can be reduced by altering capacitance. Certainelectrical circuit parameters are optimized through impedance matchingor detuning of series capacitors. Other circuits can be enhanced by theuse of capacitors to provide current limiting and/or voltage division.Steady state series capacitor applications include motor running,filtration, power factor correction, efficient power transfer, voltageboosting, and the like. Series, shunt and hybrid capacitor arrangementscan be employed to enhance motor torque, speed, efficiency, power, powerfactor, VA efficiency, coupling and the like. Various capacitor bank andmotor winding configurations can also allow induction generators topower induction motors by providing the required magnetizing currentsfor both devices. In such an application, power quality can be improved,while reducing the cost of electric grid alternative sources, emergencypower supplies, mobile equipment, and portable generators. Further,operational variation of capacitance and capacitive reactance can beused to enhance electrical network steady state performance.

[0006] The characteristics of DC networks also can be improved throughthe use of capacitors. In DC networks, capacitors can be used tomoderate rapid changes in DC network voltage, to store energy for suddenincreases in demand, and to absorb energy when the DC network issubjected to sudden increases in source current or decreases in loadcurrent. Capacitors are used to block DC. They are further employed tocouple signals in predominantly DC applications and in resonant DClinks. However, low ratios of instantaneous and steady state powercapability to total stored energy tend to limit the operating utility ofcapacitors in DC applications. High ESR and overheating often limit theutility of conventional capacitor selections such as electrolyticcapacitance in DC and signal coupling applications.

[0007] Capacitors typically are categorized as either non-polar orpolar; and there are many realizations of each category. Non-polarizedcapacitors generally are useful in both DC and AC applications.Unfortunately, non-polarized capacitors-especially in seriesconfigurations-are not well-suited for many AC and DC applications dueto limitations in size, capacitance, weight, efficiency, energy density,and cost. Singular polarized capacitors traditionally have been limitedto use in DC and small AC signal coupling applications due to theirunidirectional, forward biasing requirements. In addition, anti-seriespolarized capacitors can be used in transient applications, such asmotor starting, and forwardly biased anti-series polarized capacitorscan be continuously operated in AC applications. In DC applications,polarized capacitors are widely used for filtering, such as in theoutput stage of DC power supplies. Polarized capacitors are also used tocouple signals between amplifier stages. Finally, polarized capacitorshave historically been used as rectifiers.

[0008] Non-polarized capacitors commonly are constructed of twoconductors separated by a dielectric or insulator. The conductorstypically are made of a conductive material, such as copper, aluminum,other metal, or doped semiconductor. The dielectric or insulator may becomposed of air, mica, oil, paper, plastic or other compound.Non-polarized capacitors also may be constructed as metalized filmcapacitors which are composed of a thin layer of plastic havingmetalized surfaces. The capacitance of non-polarized capacitorsgenerally is limited by the surface area of the discrete conductors, thedistance separating the conductors, and the dielectric constant. Therated voltage of such capacitors is limited by the dielectric constant,dielectric strength, and material and fabrication defects. The currentand rate of change of current (i.e., di/dt) is limited by the, ESR,mechanical strength and thermodynamic properties of the particularcapacitor materials and structure. Metalized film capacitors routinelyshort at points of minimum dielectric thickness. The subsequent burnthrough or fault clearing is sometimes referred to as self healing.Perhaps progressive self destruction would be a more accuratedescription of this behavior. The failure mechanism of shorting and thenburn through can be disruptive in sensitive circuits such as digitaldevices. Further, metalized film capacitors tend to poorly dissipateheat. This creates internal hot spots and tends to accelerate capacitorfailure.

[0009] Parallel-plate-type capacitors generally constitute the mostcommon commercial realizations of the non-polarized capacitor. In suchimplementations, dielectric breakdown and failure of such capacitorembodiments often are associated with concentrations of chargeaccumulations at corners and sharp points of the conductive plates andmaterial defects and variation of thickness in high electric fieldconditions. Although the capacitor can be designed and the dielectricmaterial chosen such that the capacitor theoretically should withstandsuch conditions, conventional macroscopic manufacturing methods often donot provide the accuracy and control needed to ensure that thefabricated capacitor can perform at its theoretical capability. Forexample, conventional techniques cannot ensure that sharp corners orburrs on the conductors will be avoided, or that the thickness of thedielectric material will be uniform throughout its area, or that thedielectric will be disposed on the conductors in a conformal manner.Further the surface area of parallel-plate-type capacitors has beengenerally limited to flat place construction and conventionalenhancement techniques such as plate sharing and spiral wound packaging.

[0010] Polarized capacitors have enhanced surface area as compared tonon-polarized capacitors, which, unfortunately, introduces additionalcapacitor components, a charge transport mechanism, and additionallosses. For example, the physical composition of one commonly usedpolarized capacitor—an electrolytic capacitor—includes a conductor,anode foil, anodized layers, liquid impregnated paper layer, insulationpaper layer, cathode, and conductor. The construction methods and lossmechanisms for other polarized devices. (symmetric and asymmetric) suchas super capacitors, ultra capacitors and double layer capacitors aresimilarly well known. However, polarized capacitors (as well as otherpolarized electric charge storage (PECS) devices), generally have a lowcost per unit of capacitance and smaller mass and dimensions as comparedwith their non-polarized counterparts. These characteristics favor theuse of polarized capacitors over non-polarized capacitors.

[0011] Despite these advantageous properties, polarized capacitors alsohave their drawbacks. The electrically directional capacitance versusrectification circuit behavior due to electron tunneling is oftendisadvantageous. As another example, polarized capacitors exhibit ahigher equivalent series resistance (ESR) at power frequencies than thenon-polarized type due to the resistance of the paper/electrolyte andpower losses in the oxide (i.e., dielectric) layer. Further,electrolytic capacitors outgas hydrogen due to the electrolysis ofwater, and ion transport limitations and conductor termination practicestend to contribute to a steep frequency response curve. Still further,the maximum AC ripple current that can be tolerated by electrolyticcapacitors is limited by the ESR, rated voltage and the thermodynamic,mechanical, and venting properties of the capacitor package that allowit withstand the resultant heat and pressure buildup without rupturing.Further, the most commonly used material, aluminum, requires greatenergy to refine conventionally. The anode etching and forming processthen requires additional large inputs of energy, chemical processing andhandling. Other conventionally constructed polarized charge storagedevices suffer innumerable similar disadvantages.

[0012] Certain known methods exist for improving the thermodynamicproperties of polarized capacitors. These methods include increasingthermal mass by increasing foil thickness, increasing fluid volume andthe use of thicker can material. It is also possible to increase heatdissipation by reducing the thermal resistance to heat flow. This isaccomplished by such methods as crimping the cathode foil to the can,increasing the surface area of the can internally and externally andcreating additional thermal structures such as cold fingers, headers andstud mounting. Another known methods include increased air flow,circulating fluid and other external heat control methods. Finallyincreased radiation and conduction can be achieved by means ofincreasing the capacitor allowable operating temperature. These methods,though somewhat effective tend to increase costs substantially and inmany cases substantially increase the physical size and weight of thecomponents.

[0013] Typically, for both polarized and non-polarized discretecapacitors, neither the theoretical dielectric strength nor thetheoretical dielectric constant, have been effectively realized due tomaterial imperfections, imprecise manufacturing processes, and boundaryinterface problems. These factors, in turn, limit both the maximum rateddevice voltage and capacitance that may be attained for a givencapacitor implementation. Still further, imbalances in conductioncurrent and displacement current capabilities combined with inconsistentmaterial properties limit the transient and sustained currentcapabilities for a given capacitor. Structural thermodynamic limitationsfurther tend to limit transient and steady state electrical currentcapabilities and capacitor operational lifetime. Accordingly, there is aneed to provide improved capacitors and methods for fabricatingcapacitors that result in increased capacitance, voltage and currentratings, and power delivery.

[0014] It is well known that capacitance in flat plate capacitors isgoverned by the following equation:

C=E ₀ E _(R) A/d

[0015] where E₀ is the permittivity of free space, E_(R) is the relativepermittivity of the dielectric, A is the common surface area of theconductors, and d represents the distance between conductors. From theforegoing equation, it can be seen that capacitance can be increased byincreasing the common surface area A of the conductors. FIG. 1 shows aninstantaneous charge accumulation on the conductor plates 10 and 11 of ageneralized capacitor 15 having a planar surface for the conductivelayers. Microscopic charge displacement in the dielectric allows currentflow. Positive and negative charges are shown. A dielectric layer 13 isdisposed between the conductor plates 10 and 11.

[0016] An example of a known technique for increasing surface area canbe seen in FIG. 2, which represents a magnified cross-sectional view ofan exemplary embodiment of a polarized electrolytic capacitor 20 havingconductor foils 22 and 24. The surface area of the foils 22 and 24 isincreased by acid etching the conductors such that microchannels 26 areformed. The microchannels 26 typically are on the order of 40 μm by 1 μmand have sharp edges. The high purity aluminum anode 22 is oxidized byknown large scale fabrication methods to create a thin film of aluminumoxide in either crystalline, polycrystalline or amorphous form to createa dielectric layer 28 having a relative dielectric constant ER ofapproximately 9. The insulation rating, corresponding to such adielectric constant is generally; on the order of 1.1 nM/V.

[0017] It can be seen from FIG. 2 that the effective surface area of theconductor foils is increased substantially as a result of thebroom-straw-like structure. However, it is difficult to charge thecapacitor, particularly at high voltages due to spatial distancevariations between the extremities of the broom-straw-like structuresand the attendant displacement current limitations. To remedy thisinherent weakness, an additional charge transport mechanism isintroduced in the form of a paper wet with an electrolytic solution toprovide a pathway for electrical charges to reach the enhanced surfacearea of the conductor during the charging process.

[0018] The configuration illustrated in FIG. 2 has many characteristicswhich ultimately limit the performance and longevity of the capacitor.For example, negative ions, which travel from the cathode foil to theanode foil through the wetted paper during the charging process,increase the ESR of the capacitor and limit ripple current ratings.Hydrogen gas emitted during the charging process due to the electrolysisof water must be vented. Mechanical weakness of the structure andrequired anodization thickness limit capacitor rated voltage. And,although the microchannels serve to increase the surface area of theconductors, the effect of this enhancement is reduced from two orders ofmagnitude to one order of magnitude as rated voltages are increased.

[0019] Another drawback to aluminum electrolytic capacitors is theenormous quantity of energy required for fabrication. Aluminum has beenreferred to as congealed electricity. The energy required for highpurity aluminum, such as required for anodic foil is greater still.Conventional manufacturing typically requires processing with firststrong alkaline and then strong acid chemical baths in an impressedelectrical field. Several washes of high purity water are also required.Great amounts of electrical power are required for heating, oxidizingand forming the aluminum foil and tab materials. The electrolytesolution is often a petrochemical such as ethylene glycol mixed withwater and other chemicals such as acids or bases. Winding, wetting andstuffing operations are followed by final electrical formation steps.These steps and inputs are highly energy intensive. Thus, conventionalmanufacturing techniques for aluminum electrolytic capacitors require asubstantial quantity of energy.

[0020] Anti-series pairs of polarized capacitors suffer from severaldisadvantages. First if the pair is unbiased, one device acts as acapacitor while the other component acts as a diode. This operatingcondition alternates every half cycle and greatly shortens capacitorassembly life and is a source of electrical harmonic current and groundreference voltage disturbances. When equal size, anti-series capacitorsare biased, the capacitance of the assembly is cut approximately inhalf. ESR and related high dissipation factor are increased for theassembly, as they are series additive electrical phenomena.

[0021] Small-scale manufacturing techniques also are known forfabricating capacitors. For example, semiconductor manufacturingtechniques are used to create capacitors in solid state integratedcircuit devices. Because an object of integrated circuit memory designsis to create short half life circuits at low voltages, such designsfocus on reducing capacitance often and favor lower dielectric constantsrather than increasing capacitance and enhancing power deliverycharacteristics. Where high dielectric constants and current densityhave been favored in these applications the purpose is generally inpursuit of miniaturization and ever lower capacitance. Decouplingcapacitors act as localized, low impedance voltage sources; thusfurnishing noise free power to synchronous integrated circuits. Printedcircuit board electrical, thermal and mechanical limitations severelylimit integrated capacitor materials and construction techniques. Alsointegrated capacitance variation cannot be easily controlled usingconventional manufacturing techniques.

[0022] Other polarized electrical charge storage device research hasrevolved around increasing total energy storage and has resulted in thedevelopment of super capacitors, ultra capacitors or double layercapacitors. Such capacitors are intended to bridge the gap betweenelectrochemical batteries and polarized capacitors, such as liquidtantalum and aluminum electrolytic capacitors. Energy storage capabilityis increased in super, ultra and double layer capacitors by enhancingconductor surface area and volume charge storage capabilities bylarge-scale manufacturing techniques such as those described in U.S.Pat. No. 5,876,787, entitled “Process of Manufacturing a Porous CarbonMaterial and Capacitor having the Same.”

[0023] Super capacitors, ultra capacitors and double layer capacitors,however, have many limiting characteristics which inhibit theirusefulness for power applications. For example, such capacitors haverelatively low voltage ratings (i.e., 1V-3V per cell) and tend to haverelatively high ESR, both of which are not positive attributes inapplications having power transfer as an object. Further, the devicesare polarized charge storage devices, thus restricting their usefulnessin AC power applications. Further, such devices often fail to deliverthe full charge stored on demand. A great deal of the stored charge canremain unavailable. This observed characteristic has a time dependantcomponent and a time invariant component. Not all the stored energywhich can be put to use, can be released instantaneously, making thedevices less suitable for rapid rate charge and discharge applications.The second mechanism by which the stored charge remains unavailable forconvenient use is the phenomenon of trapped energy. Series assembliescomprised of capacitors of various sizes and charge levels will retain asignificant and measurable voltage trapped within, at the end ofdischarge. The low cell voltages of super, ultra and double layercapacitors require many cells to achieve common system voltages. Thisphenomenon can also be observed in electrochemical battery dischargesand is sometimes referred to as cell inversion.

[0024] Improvements in power delivery and end use systems can have asignificant impact on today's economy and environment. Moreparticularly, electrical motors presently consume about 65% of meteredreal power. To illustrate the improvements that can be realized, assumethat an example motor has a 50% power factor and that the remaining 35%of metered load is purely resistive. Thus, the total Volt-Amps (VA) ofthe combined load is 119.27% of the real power, and the 35% resistiveload is only 29.24% of the total VA load. Accordingly, the motor load inthis example is greater than 70.75% of the system total VA load.Capacitors arranged in series, shunt, and hybrid configurations can helpeconomically to correct motor power factor and reduce the economic andenvironmental consequences associated therewith. Further, certain LCmotor designs have been demonstrated to provide increased motorefficiency, torque, power factor, vibration, phase-leg-loss and otherdesirable motor properties over purely magnetic designs thus alsoimproving economics and the environment.

[0025] Such improvements in power delivery and end use systems and theaccompanying benefits can be realized by an enhanced discretenon-polarized capacitor having increased capacitance, heat dissipationand power transfer capabilities. Such improvements also could berealized by an enhanced discrete polarized capacitor having increasedcapacitance, increased voltage and ripple current ratings, reduced ESR,and improved heat dissipation and power transfer characteristics. Theimproved discrete capacitor characteristics and methods can also bebeneficially applied to integrated circuits, digital chips and otherelectrical devices.

BRIEF SUMMARY OF THE INVENTION

[0026] As used herein, the term “a” or “an” may mean one or more. Asused herein in the claim(s), when used in conjunction with the word“comprising”, the words “a” or “an” may mean one or more than one. Asused herein, “another” may mean at least a second or more.

[0027] The term “AC” and “AC source” are used in their broad sense. Theterm AC and AC source shall include but are not limited to fixedfrequency, variable frequency, fixed amplitude, variable amplitude,frequency modulated, amplitude modulated, and/or pulse width modulatedAC. Other signal and/or communication techniques including sideband andsuperposition as well as other linear, nonlinear, analog or digitalsignals and the like are expressly included. AC sources may includeharmonic components. AC and AC source are considered to refer to timevarying signals. These signals may contain data and/or power. Hybrid ACsources varying in multiple methods and/or modes are similarly included.References to a single AC source shall not be construed to eliminateplural AC sources.

[0028] As used herein the terms “adhese”, “adhesion”, “adhesed” and“adhere”, shall include without limitation, methods, forces, mechanisms,techniques and materials whereby atom to atom, molecule to molecule andlayer to layer bonding, gluing, sticking, adhering, attraction,affinity, sharing, and other methods, forces and materials used tosecure, fasten, bond, connect, interconnect, weave, interweave, lock andkey, or otherwise hold together like and/or dissimilar materials. Thisprocess shall include without limitation, nano, micro and macroconnection and interconnection.

[0029] As used herein, the term “anodized” shall mean to subject a metalto electrolytic action at the anode of a cell in order to coat with aprotective, insulated or decorative film.

[0030] As used herein, the term “capacitor” shall mean an electricalcircuit element which is based on phenomena associated with electricfields. The source of the electric field is separation of charge, orvoltage. If the voltage is varying with time, the electric field isvarying with time. A time-varying electric field produces a displacementcurrent in the space occupied by the field. The circuit parameter ofcapacitance relates the displacement current to the voltage. Energy canbe stored in electric fields and thus in capacitors. The relationshipbetween the instantaneous voltage and current of capacitors and thephysical effects upon the capacitor are critical to capacitorimprovements.

[0031] As used herein, the term “conductor” shall mean a material, suchas a metal, which contains a large number of essentially free chargecarriers. However, the term conductor is not limited to only a metal.These charge carriers are free to wander throughout the conductingmaterial. They respond to almost infinitesimal electric fields, and theytend to continue to move as long as they experience a field. These freecarriers carry the electric current when a steady electric field ismaintained in the conductor by an external source of energy. Understatic conditions, the electric field in a conductor vanishes.Conductors, include without limitation superconductors, high temperaturesuperconductors, doped semiconductors, metalized films and the like areconsidered conductors when used for these purposes. A conductive layeris that layer or layers of the capacitor that forms a conductor. Theconductive layer may be formed of a conductive polymer.

[0032] As used herein, the term “conformal” shall mean withoutlimitation having the same operable shape with consistent dimensions.

[0033] As used herein, the term “conformal coating” shall mean withoutlimitation the touching and/or bonding of one layer to another. Theshapes of the two layers at their interface or boundary shall be matchedas closely as practicable. If layer ‘A’ is concave in a region, thenlayer ‘B’ must be convex in this region to achieve this effect. Theconvex layer ‘B’ must be smaller than the concave layer ‘A’ in order toachieve this effect. In general, the tighter the fit of the conformalcoating, the greater the bond strength and conformance of the conformalcoating; and this provides a superiority of the boundarycharacteristics. Preferably, uniformity of conformal coating thicknessis desirable.

[0034] As used herein, the terms “DC”, “DC electricity” and “DC current”may be any technology, design, condition, physical condition or device,creating, causing, contributing, supporting, or favoring aunidirectional or predominantly unidirectional flux, displacement,transmission and/or flow of one or more electrical charge carriersincluding but not limited to electrons, ions and holes. This shall notbe construed to exclude the bidirectional travel of oppositely chargedparticles. DC shall refer broadly to a steady state voltage that doesnot substantially vary with time.

[0035] As used herein, the terms “DC source”, “DC voltage source” or “DCpower source” is used in its broad sense. This term generally covers andincludes any method and device used or useful in the generation,production or AC rectification to produce DC electricity. DC powersupplies expressly include, but are not limited to DC generators,electrochemical batteries, photovoltaic devices, rectifiers, fuel cells,DC quantum devices, certain tube devices and the like. They shallinclude regulated, unregulated, filtered and non-filtered types. DCsources shall expressly include but are not limited to rectifierspowered by non-electrically isolated sources, autotransformers,isolation transformers, and ferroresonant transformers. DC-to-DCsupplies, switching DC power supplies, pulse chargers and the like aresimilarly included. The singular term shall not be construed to excludemultiple and/or redundant DC sources in shunt, series and/or anti-seriesconfigurations. Single phase and polyphasic rectified DC sources and/orchargers are included. The ability to adjust the DC bias level in realtime is similarly included. The use of ‘diode dropper devices’ andprecisely regulated floating DC power supply voltages can provideoperational and design benefits, especially where electrochemicalbatteries are included for power source redundancy, or are theanti-series PECs device employed.

[0036] As used herein, the term “dielectric” shall mean a substance inwhich all charged particles are bound rather strongly to constituentmolecules. The charged particles may shift their positions slightly inresponse to an electric field, but they do not leave the vicinity oftheir molecules. Real dielectrics exhibit a feeble conductivity, but cangenerally be characterized as nonconductive. The electric field causes aforce to be exerted on each charged particle, positive charges beingpushed in the direction of the field, negative charges oppositely, sothat positive and negative parts of each molecule are displaced fromtheir equilibrium positions opposite directions. Dielectrics increasecapacitance, increase maximum operating voltage and provide mechanicalsupport between the conducting plates of a capacitor. There are variousclasses of dielectrics with exploitable characteristics. A dielectriclayer is that layer or layers that form the dielectric of the capacitor.

[0037] As used herein, the term “dielectric constant” shall meanrelative to that of a vacuum.

[0038] As used herein, the term “dielectric strength” shall mean themaximum strength which a dielectric can withstand without breakdown. Ifthe electric field in a dielectric is made very intense, it will beginto excite large numbers of electrons to energies within the conductiveband. This dislodges the excited electrons completely out of themolecules, and the material will become conductive in a process known asdielectric breakdown.

[0039] As used herein, the term “electrolyte” shall mean a materialwhich exhibits electrical properties midway between conductors anddielectrics. Electrolytes are typically in the liquid phase in ambientweather conditions. Additives and impurities alter the electricalcharacteristics of electrolytes and electrolytic solutions.

[0040] As used herein, the term “enhanced surface” shall mean anincreased surface area over all or a portion of a conductor layer orover all or a portion of a dielectric layer. The portion shall beconsidered enhanced when the surface area is enhanced over a gross areacomprising greater than or equal to 2% of the nominal dimensions of thesurface or region. For example, there will routinely be a border orboundary region surrounding the increased surface area which borderregion does not have enhanced surface area. For example, an enhancedsurface area of a conductive or dielectric is surface area for aparticular layer (conductive or dielectric) that has greater surfacearea than would a planar surface which has an area determined bymultiplying its length by its width.

[0041] As used herein, the term “moiety” shall mean one of twoapproximately equal parts or basic and complementary divisions of thewhole.

[0042] As used herein, the term “semiconductor” shall mean a materialhaving electrical properties midway between conductors and dielectrics.Semiconductors are typically in the solid phase in ambient weatherconditions. Additives, impurities and dopants alter the electricalcharacteristics of semiconductors.

[0043] As used herein, the term “polarized capacitor” shall includewithout limitation, other polarized electric charge storage (PECs)devices, such as electrochemical batteries, fuel cells, liquid tantalumcapacitors, electrolytic capacitors, super capacitors, ultra capacitors,quantum devices and the like.

[0044] As used herein, the term “sharpy” shall mean a surface that canbe characterized as having sharp points, angles, rapid changes ofdirection, dip, strike, and pitch, as well as abrupt demarcations andthe like.

[0045] As used herein, the term “smooth” shall mean a surface that isrelatively free of sharp points, angles, rapid changes of direction,dip, strike, and pitch, as well as minimally abrupt demarcations and thelike.

[0046] As used herein, the term “topographical surface” shall mean asurface that is 3-dimensional in shape. The 3-dimensional surface mayinclude any structure or projection extending from the surface.

[0047] As used herein, the term “undulation” or “undulating” shall meana rising and falling in wavelike fashion. Undulating surfaces shallpresent a wavy appearance, surface, boundary or margin.

[0048] As used herein, the term “uniform” shall mean with respect to adistance that the distance between opposing surfaces of a conductivelayer and a dielectric layer are of an equal distance. With respect tothe thickness of the dielectric layer, it means that the layer has arelatively constant thickness.

[0049] The following discussion contains illustrations and examples ofpreferred embodiments for practicing the present invention. However,they are not limiting examples. Other examples and methods are possiblein practicing the present invention.

[0050] The present invention relates to enhancing the current density,voltage rating, power transfer characteristics, and charge storagedensity of solid state and electrolytic capacitors by increasing theconductor surface area with smooth structures, reducing the distanceseparating the conductors, and improving the effective dielectriccharacteristics by employing construction techniques on the atomic andmolecular levels.

[0051] The present invention relates generally to an electrical chargestorage device (ECSD) with enhanced power characteristics. Moreparticularly, the present invention relates to enhancing the currentdensity, voltage rating, power transfer characteristics, and chargestorage density of various devices, such as capacitors, batteries, fuelcells and other electrical charge storage devices. Electrical chargestorage device electrical functions include conduction current anddisplacement current. They may also include mass transport, iontransport and charge generation by electrochemical means. Electricalcharge storage device thermal functions include heat generation, heatconduction and heat radiation. For example, one aspect of the presentinvention is solid state and electrolytic capacitors where the conductorsurface area is increased with smooth structures, thereby reducing thedistance separating the conductors, and improving the effectivedielectric characteristics by employing construction techniques onatomic, molecular, and macroscopic levels. The sizes, physical, quantumand electrical properties of the atoms and molecules forming theconductors and dielectrics, as well as—when employed the electrolytechemical constituents—, will greatly vary. Similarly the applicationrequirement temperature, pressure, mechanical forces and volumeconstraints will vary over wide ranges. The electrical applications willsimilarly vary over wide ranges in terms of voltage, current, frequency,capacitance required, transient demands, steady state demands, frequencyresponses, desirable stability and operational variation preferences andthe like. Thus, many specific materials, material properties,structures, topologies, surface area enhancement methods, temperaturecontrol mechanisms, strengths, construction mechanisms, scales, sizesand packaging methods will be employed in a plethora of preferredimplementations and embodiments of the present invention.

[0052] One aspect of the present invention is an electrical chargestorage device exhibiting enhanced power characteristics.

[0053] Another aspect of the present invention is an increase in surfacearea within a spatial area or volume.

[0054] Another aspect of the present invention is an increase in surfacearea combined with a reduction in charge separation distance.

[0055] Yet another aspect of the present invention is an electricalcharge storage device exhibiting increased structural strength.

[0056] Fundamental physical properties of solid state substances such ascrystals depend upon the periodicity of the solid, over a specificdimensional scale, typically in the nm regime. These physical propertiesinclude dielectric constant, dielectric strength, conductivity, bandgap, ionization potential, melting point and magnetic saturation.Precise control of the size and surface of solid state substances suchas nanocrystals, polycrystals, crystals, interstitials, amorphousmaterials, metals and alloys can tune their properties. Techniques ofatomic and molecular assembly can create new materials and products suchas interstitial, nanocrystal and nanopoly-crystalline based materials.

[0057] In one implementation of the present invention, molecular makeupis varied to achieve conductive and nonconductive structures forconstruction of charge storage mechanisms by variation of the layers andnumbers of layers of the underlying materials.

[0058] In one implementation the present invention has conductive anddielectric layers that mechanically support each other thereby providingincreased strength. When an electric potential is impressed across thepresent invention the charge will not have sharp corners to accumulateat. During short circuits, motor power circuit reclosure, motorstarting, motor locked rotor and transformer magnetizing inrush themechanical strength of the device will help to prevent mechanicaldamage. The increased current to capacitance capabilities will allowhigher currents without heat damage. Reduced voids, impurities,increased moiety, combined with atom by atom construction methods andquantum forces will additionally work to increase strength in thepresent invention.

[0059] Above a critical number of atoms, one particular bondinggeometry; characteristic of an extended solid “locks in.” As additionalatoms are added, the number of surface atoms and the spatial volumechange, but the basic nature of the chemical bonds in the cluster is notaltered. Nanocrystal properties, slowly and smoothly extrapolate tolarge scale, according to scaling laws and heuristics.

[0060] In one embodiment, there is an electrical charge storage devicewhich is macroscopically viewed as a flat plate capacitor, coaxialcapacitor/conductor or other electrical waveguide which is soconstructed as to enhance the surface area of the capacitor, conductoror waveguide.

[0061] In one embodiment, there is an electrical charge storage devicewhich is macroscopically viewed as a flat plate capacitor, coaxialcapacitor/conductor or other electrical waveguide which is soconstructed as to enhance the electrical characteristics of thecapacitor, conductor or waveguide.

[0062] In one embodiment, there is an electrical charge storage devicewhich is macroscopically viewed as a flat plate capacitor, coaxialcapacitor/conductor or other electrical waveguide which is soconstructed as to enhance the thermodynamic characteristics of thecapacitor, conductor or waveguide.

[0063] In one embodiment, there is an electrical charge storage devicewhich is macroscopically viewed as a flat plate capacitor, coaxialcapacitor/conductor or other electrical waveguide which is soconstructed as to enhance the mechanical characteristics of thecapacitor, conductor or waveguide.

[0064] In one embodiment, there is an electrical charge storage devicethat includes at least one smooth, undulating conducting, substratesurfaces. A second smooth layer, composed of dielectric is fabricated inintimate contact with the conducting layer, which dielectric layerconformally coats the substrate. At substantially every point, theundulating surface of the dielectric maintains moiety with theconductive substrate. A third smooth layer, of conductive, smoothundulating material is fabricated in intimate contact with thedielectric. Moiety is maintained throughout the surfaces such that thethree layers undulate in a three dimensional matching fashion. Onesimple structure can be conceptually illustrated as resembling twosheets of corrugated iron separated by a sheet of corrugated plastic.Variation in dielectric thickness and strength will vary the ratedcapacitor voltage for a given dielectric relative permittivity.Variations in magnitude and period will alter the surface areaenhancement over that of a flat sheet. Variation in relativepermittivity of the dielectric will alter the required separationdistance for a given voltage. The capacitance is determined by therelative permittivity, effective surface area and distance separation.The capacitive reactance is further determined by the electricalfrequency, the structure and the frequency response of the materials. Ifon the other hand, the two pieces of corrugated iron are separated by astiff piece of flat plastic and the relative peaks of the top and bottomlayer of the corrugated iron are adjacent to each other, then there isexpanded surface area, but there is not expanded useful surface area.

[0065] In one embodiment of the invention, there is an electrical chargestorage device that has a first conductive layer having a firstconductive surface; a dielectric layer having opposing first and seconddielectric surfaces, the first dielectric surface having a substantiallyconformal surface with the first conductive surface; and a secondconductive layer having a second conductive surface disposed adjacent tothe second dielectric surface. The first and/or second conductivesurfaces have a conductive substrate with a smooth, enhanced surfacearea which is constructed. Additionally, a conformal smooth layer ofdielectric is deposited in intimate contact with the substrate. Aconformal second conductive layer or substrate is then fabricated inintimate contact (moiety) with the open side of the conformal layer ofdielectric to form a capacitor cell. The regionally symmetric dielectriclayer will give rise to a displacement current when an electricpotential is impressed across the said dielectric layer. The at leasttwo conductive substrates may be terminated for electrical connection toother electrical circuit elements. Or, in the alternate, the process cancontinue, building an additional capacitor layer for connection inseries or shunt.

[0066] In another embodiment of the invention, there is an electricalcharge storage device that has at least one first conductive layerhaving a conductive curvilinear surface; at least one second conductivelayer having a conductive curvilinear surface; and at least onedielectric layer disposed between the first conductive curvilinearsurface and the second conductive curvilinear surface.

[0067] In another embodiment of the invention, there is an electricalcharge storage device that has a first conductive layer having a firstconductive curvilinear surface, a dielectric layer having opposing firstand second dielectric curvilinear surfaces, the first dielectriccurvilinear surface disposed proximate the first conductive curvilinearsurface and substantially following the first conductive curvilinearsurface across its area, and a second conductive layer having a secondconductive curvilinear surface, the second conductive curvilinearsurface disposed adjacent the second dielectric curvilinear surface andsubstantially following the second conductive curvilinear surface acrossits area.

[0068] In still yet another embodiment of the invention, there is anelectrical charge storage device that has a first conductive layerhaving a first conductive smooth, enhanced surface; a dielectric layerhaving opposing first and second dielectric surfaces, the firstdielectric smooth, enhanced surface disposed proximate the firstconductive smooth, enhanced surface and substantially following thefirst conductive smooth, enhanced surface; and a second conductive layerhaving a second conductive smooth, enhanced surface, the secondconductive smooth, enhanced surface disposed adjacent the seconddielectric surface and substantially following the second conductivesmooth enhanced surface.

[0069] In another embodiment of the invention, there is an electricalcharge storage device that has a first conductive layer having a firstconductive surface; a dielectric layer having opposing first and seconddielectric surfaces, the first dielectric surface having a substantiallyconformal surface with the first conductive surface; and a secondconductive layer having a second conductive surface disposed adjacent tothe second dielectric surface.

[0070] In another embodiment of the electrical charge storage device,there is an electrical charge storage device that has a first conductivelayer having a first conductive surface; a dielectric layer havingopposing first and second dielectric surfaces, the first dielectricsurface substantially maintaining moiety with the first conductivesurface; and a second conductive layer having a second conductivesurface disposed adjacent to the second dielectric surface.

[0071] In another embodiment of the electrical charge storage device, atleast one first conductive layer, having a shaped topographical surface;at least one second conductive layer having a conductive shapedtopographical surface; and at least one dielectric layer disposedbetween the first conductive shaped topographical surface and the secondconductive curvilinear surface.

[0072] In one embodiment, the electrical charge storage device has afirst conductive surface and a first dielectric surface that aresubstantially conformal.

[0073] In one embodiment, the electrical charge storage device has asecond conductive surface and second dielectric surface that aresubstantially conformal.

[0074] In one embodiment, the electrical charge storage device has thefirst conductive surface substantially maintains moiety with the firstdielectric surface.

[0075] In one embodiment, the electrical charge storage device has thesecond conductive surface substantially maintains moiety with the seconddielectric surface.

[0076] In one embodiment, the electrical charge storage device has atleast 2% of the first conductive surface area being conformal with anadjacent area of the first dielectric surface. With this particularpercentage area being conformal, the electric storage device shouldexhibit enhanced power characteristics. Preferably, the two areas shouldbe substantially conformal. In some instances, however, the surfaces maybe constructed such that they are exactly conformal. For example, thetwo areas should be essentially-exact images of one another. However,the areas may be substantially conformal such that increased powercharacteristics of the device are achieved.

[0077] In one embodiment, the electrical charge storage device has atleast 2% of the first conductive surface area maintaining moiety with anadjacent area of the first dielectric surface. Additionally, the secondconductive surface area preferably should maintain moiety with anadjacent area of the second dielectric surface. With this particularpercentage areas maintaining moiety, the electric storage device shouldexhibit enhanced power characteristics. Preferably, the two areas shouldmaintain exact moiety. However, the areas may maintain substantialmoiety such that increased power characteristics of the device areachieved. For example, there will routinely be a border or boundaryregion surrounding the interface area where the dielectric surface area,thickness, extent, breadth and/or depth will exceed that of theassociated conductor layer. Similarly, at the point of electricalconnection, or heat sinking area, the electrical conductor layer mayroutinely vary dimensionally from that of the dielectric layer.

[0078] In one embodiment, the electrical charge storage device has atleast 2% of the first conductive surface area being disposed at asubstantially uniform distance from the adjacent first dielectricsurface area. For the given area, the distance of each atom or moleculefor the conductive surface is at a substantially uniform distance withthe opposing atom or molecule of the dielectric surface.

[0079] In one embodiment, the electrical charge storage device has atleast 2% of the first conductive surface area being disposed at aselected distance ranging from 0.0001 μm to 2000 μm from the firstdielectric surface area. Additionally, in another embodiment, it ispreferred that the second conductive surface area be disposed at aselected distance ranging from 0.0001 μm to 2000 μm from the seconddielectric surface area. The selected distance of the variousembodiments from 0.0001 μm to 2000 μm are selectable for the particularelectrical charge storage device. The selected distance may vary aparticular selectable tolerance for a given selected distance. Forexample, the selected distance may vary a particular percentage for thedistance.

[0080] In one embodiment, the electrical charge storage device may havesmooth, enhanced surface area for the conductive and/or dielectriclayers of the inventive device. Preferably, the surface of an adjoiningconductive layer and dielectric layer, have a similar smooth surfacearea structure. In various embodiments of the inventive device, thesmooth enhance surface area structures may be: i) alveolar in shape(like a biological lung), ii) sinusoidal rows in shape, iii) embedded ina permeable vertical fashion (like a sponge), iv) parabolic in shape, v)inverted or everted (i.e. it could be convex or concave), vi) spiral inshape, vii) random swirl in shape, vii) quasi random swirl in shape,viii) can be mathematically defined (such as, sin(X)sin(Y),(A)sin(bX)sin(bY), parabolic, conical, etc.), ix) tubular in shape, x)annular in shape, xi) toroidal in shape.

[0081] In one embodiment of the electrical charge storage device, thedevice reduces dielectric heating by the use of smooth structures.

[0082] In another embodiment of the electrical charge storage device, aconformal filter medium is constructed between one substrate and theadjacent conformal layer of dielectric. The conformal filter medium wetsthe adjacent substrate and dielectric with an electrolytic fluid ofknown compositions. The conformal filter medium will allow ion transportto cause a displacement current to occur across the conformal dielectriclayer. A second conformal conductive substrate is then fabricated inintimate contact with the structure to complete the electrolyticcapacitor cell. The at least two conductive substrates may be terminatedfor electrical connected to other electrical circuit elements. Or in thealternate, the process can continue, building an additional capacitorlayer.

[0083] In one embodiment of the electrical charge storage device,materials used for the conductive layers and the dielectric layers areadhesed to one another in the construction or fabrication process.

[0084] In one embodiment of the electrical charge storage device,variation in adhesion parameters are employed to alter device structure.

[0085] In one embodiment of the electrical charge storage device, atleast one conductive layer is comprised of an alloy and/or a metal,including, but not limited to aluminum, iron, copper, silver, gold or acombination thereof.

[0086] In another embodiment of the electrical charge storage device,the device is constructed with a substrate, including, but not limitedto the following: iron substrate, aluminum substrate, ceramic substrate,silicon substrate, and carbon substrate, or a combination thereof.

[0087] In one embodiment of the electrical charge storage device, thedielectric layer is constructed with any of the following: a crystallinesubstance, a polycrystalline substance, or an amorphous substance.

[0088] In one embodiment of the present invention the device isconstructed with an aluminum oxide dielectric layer in a crystallineform (for example sapphire), polycrystalline form, layered form,amorphous form (similar to glass) or in hybrid form.

[0089] In one embodiment of the present invention the molecularorientation and structure of the conductive surface material is selectedto allow maximum electrical conduction.

[0090] In one embodiment of the present invention the molecularorientation and structure of the dielectric surface material is selectedto provide minimum electrical conduction

[0091] In various embodiments of the electrical charge storage device,the device is constructed with a dielectric layer comprised of any ofthe following: silicon dioxide dielectric, a ceramic dielectric, atitania ceramic dielectric, a titanic ceramic dielectric, bariumtitanate dielectric, strontium titanate dielectric, lead zirconiumtitanate dielectric, diamond dielectric, or a diamond matrix dielectric,an organic dielectric, a polymer dielectric, or an organic substance.

[0092] In one embodiment of the electrical charge storage device, thedevice is formed as a capacitor.

[0093] In one embodiment of the electrical charge storage device, thedevice is formed as a battery.

[0094] In one embodiment of the electrical charge storage device, thedevice is formed as a fuel cell.

[0095] In one embodiment of the electrical charge storage device, thedevice is formed as a discrete capacitor.

[0096] In one embodiment of the electrical charge storage device, thedevice is formed as a chemical double-layer capacitor.

[0097] In one embodiment of the electrical charge storage device, atleast one conductive layer is composed of a semiconductor.

[0098] In one embodiment of the electrical charge storage device, amultilayer dielectric is deposited in order to increase dielectricconstant and dielectric strength simultaneously.

[0099] In one embodiment of the electrical charge storage device, acompound dielectric is deposited in order to increase dielectricconstant and dielectric strength simultaneously.

[0100] In one embodiment, the inventive device contains or furthercomprises a filter structure.

[0101] In one embodiment, the electrical charge storage device containsor further comprises an ion transport structure.

[0102] In one embodiment, the electrical charge storage device containsor further comprises an electrolyte.

[0103] In one embodiment, the electrical charge storage device supportsion transport.

[0104] In one embodiment, the electrical charge storage device supportscharge separation.

[0105] In one embodiment, the electrical charge storage device supportselectrical conduction.

[0106] In one embodiment, the electrical charge storage device supportsdisplacement current.

[0107] In one embodiment, a voltage is impressed across the electricalcharge storage device.

[0108] In one embodiment, an electric field is formed in the electricalcharge storage device.

[0109] In one embodiment, the volume density of the electrical chargestorage device is increased over that of a flat plate, conventionalcapacitor.

[0110] In one embodiment, the rated voltage of the electrical chargestorage device is increased over that of a conventional electrolyticcapacitor.

[0111] In one embodiment, the electrical charge storage device containsor further comprises a solid at (Twenty Five Degrees Centigrade) 25.0 [°C.] or a liquid at 25.0 [° C.].

[0112] In one embodiment, the electrical charge storage device containsor further comprises a super cooled liquid at (Twenty Five DegreesCentigrade) 25.0 [° C.].

[0113] In one embodiment, the electrical charge storage device containsor further comprises a gas at (Twenty Five Degrees Centigrade) 25.0 [°C.].

[0114] In one embodiment, the dielectric layer of the electrical chargestorage device charging process is aided by an electrolyte such asalcohol, water or a polymer.

[0115] In one embodiment, dielectric layer charging is aided by anelectrolyte contains or further comprises any one of the following: abase, a solvent, a salt, an acid, an oxidizing agent or reducing agent.

[0116] In one embodiment, the dielectric layer is composed with mica.

[0117] In one embodiment of the electrical charge storage device, thedevice reduces dielectric heat rise by intimate contact with at leastone conductive layer.

[0118] In one embodiment of the electrical charge storage device, thedevice reduces dielectric heat rise by intimate contact with at leastone heat sink.

[0119] In one embodiment of the electrical charge storage device, thedevice reduces dielectric heat rise by operational connection with atleast one heat exchanger.

[0120] In one embodiment of the electrical charge storage device, thedevice reduces dielectric heat rise by operational connection with atleast one cooling mechanism.

[0121] In one embodiment of the electrical charge storage device, thedevice reduces dielectric heat rise by operational connection with atleast one cryogenic cooling mechanism.

[0122] In one embodiment of the electrical charge storage device, thedevice electrical properties are altered by operational connection withat least one cooling mechanism.

[0123] In one embodiment of the electrical charge storage device, thedevice electrical properties are altered by operational connection withat least one cooling or cryogenic cooling mechanism.

[0124] In one embodiment of the electrical charge storage device, thedevice dielectric electrical properties are altered by operationalconnection with at least one cooling or cryogenic cooling mechanism.

[0125] In one embodiment of the electrical charge storage device, thefirst and/or second conductive layers electrical properties are alteredby operational connection with at least one cooling or cryogenic coolingmechanism.

[0126] In one embodiment of the electrical charge storage device, thedevice electrical properties are altered by one temperature changingmechanism.

[0127] In one embodiment of the electrical charge storage device, thedevice reduces electrolyte heat rise by intimate contact with at leastone heat sink.

[0128] In one embodiment of the electrical charge storage device, thedevice reduces electrolyte heat rise by operational connection with atleast one heat exchanger.

[0129] In one embodiment of the electrical charge storage device, thedevice reduces dielectric heat rise by operational connection with atleast one cooling mechanism.

[0130] In one embodiment of the electrical charge storage device, thedevice reduces electrolyte heating by reducing ion transport distance.

[0131] In one embodiment of the electrical charge storage device, thedevice reduces electrolyte heating by improving ion transport paths.

[0132] In one embodiment of the electrical charge storage device, theelectrical conductivity of at least one conductive layer is altered bydoping.

[0133] In one embodiment of the electrical charge storage device, theelectrical characteristics of the dielectric layer are altered bydoping.

[0134] In one embodiment of the electrical charge storage device, atleast one atom is adhesed to at least one atom or molecule.

[0135] In one embodiment of the electrical charge storage device, atleast one molecule is adhesed to at least one atom or molecule.

[0136] In one embodiment of the electrical charge storage device, atleast one conductive atom or molecule is adhesed to at least onedielectric atom or molecule.

[0137] In one embodiment of the electrical charge storage device, atleast one atom is adhesed to the at least one substrate.

[0138] In one embodiment of the electrical charge storage device, thesubstrate is bonded to the dielectric layer.

[0139] In one embodiment of the electrical charge storage device, atleast one adhesive bonds at least one conductive layer to at least onedielectric layer.

[0140] In one embodiment of the electrical charge storage device, thedevice further comprises at least one conductive channel to carryelectrical current to an interface of the first conductive layer and thefirst dielectric layer interface.

[0141] In one embodiment of the electrical charge storage device, thedevice further comprises at least one conductive channel to carryelectrical current to an interface of the second conductive and seconddielectric layer.

[0142] In one embodiment of the electrical charge storage device, thedevice further comprises at least one conductive channel to transport atleast one ion to a conductive layer/electrolyte interface.

[0143] In one embodiment of the electrical charge storage device, thedevice has at least one conductive layer insulated on its edge to reducefringing effects.

[0144] In one embodiment of the electrical charge storage device, atleast one conductive layer is insulated on its edge to prevent arcing.

[0145] In one embodiment of the electrical charge storage device, atleast one conductive layer is bonded to at least one wire.

[0146] In one embodiment of the electrical charge storage device, atleast one conductive layer is insulated to prevent capacitor shorting.

[0147] In one embodiment of the electrical charge storage device, atleast one pressure relieving vent is included.

[0148] In one embodiment of the electrical charge storage device, a seal(gasket material or rubber, etc.) is included.

[0149] In one embodiment of the electrical charge storage device, atleast one tab is connected to at least one conductive layer. A tab is athin metal strip connecting a positive terminal of a polarizedelectrical charge storage device such as an electrolytic capacitor to ananode foil. Other tabs may connect a cathode foil to the negativeterminal.

[0150] Combination of Inventive Device with Other Devices

[0151] The inventive electrical charge storage device may be utilizedwith various devices and other electronics. The embodiments describedherein, are not meant to limit the use of the electrical charge storagedevice, but identify some of the germane uses of the inventivecapacitor.

[0152] In one embodiment of the electrical charge storage device, atleast one conductive layer is operably connected to at least one wire.

[0153] In one embodiment of the electrical charge storage device, atleast one electrical charge storage device is operably connected to atleast one additional capacitor and/or at least one other electricalcharge storage device.

[0154] In one embodiment, the device is configured as a discretecapacitor and is operably connected to at least one additional inventivedevice which is configured as a discrete capacitor.

[0155] In one embodiment of the electrical charge storage device, atleast one conductive layer is operably connected to a DC source.

[0156] In one embodiment of the electrical charge storage device, atleast one conductive layer is operably connected to an AC source.

[0157] In one embodiment of the electrical charge storage device, atleast one conductive layer is operably connected to an DC source and anAC source.

[0158] In one embodiment of the electrical charge storage device, atleast one conductive layer is operably connected to an DC bias sourceand an AC source.

[0159] In one embodiment of the electrical charge storage device, atleast one pair of polarized capacitors are connected in an anti-seriesconfiguration.

[0160] In one embodiment of the electrical charge storage device, atleast one conductive layer of the device is operably connected to atleast one heat sink.

[0161] In one embodiment of the electrical charge storage device, thedevice is operably connected to at least one electrical component.

[0162] In one embodiment of the electrical charge storage device, thedevice is operably connected to at least one resistor.

[0163] In one embodiment of the electrical charge storage device, thedevice is operably connected to at least one semiconductor.

[0164] In one embodiment of the electrical charge storage device, thedevice is operably connected to at least one diode.

[0165] In one embodiment of the electrical charge storage device, thedevice is operably connected to at least one rectifier.

[0166] In one embodiment of the electrical charge storage device, thedevice is operably connected to at least one controlled rectifier.

[0167] In one embodiment of the electrical charge storage device, thedevice is operably connected to at least one inductor.

[0168] In one embodiment of the electrical charge storage device, thedevice operating temperature is set and maintained by external methods.

[0169] In one embodiment of the electrical charge storage device, thedevice operating pressure is set and maintained by external methods.

[0170] In one embodiment of the electrical charge storage device, thedevice operating orientation is set and maintained by external methods.

[0171] Construction Methods and Techniques for Inventive Device

[0172] The electrical charge storage device may be constructed invarious sizes, for example, as a nanoscale, microscale, molecular scale,or as a macroscale device. The inventive device may be constructed insuch a way that the various components of the inventive device areconstructed or fabricated, atom by atom, molecule by molecule, or acombination thereof. The conductive and dielectric layers may befabricated layer by layer, or atom by atom. Preferably nanotechnologyprocesses and techniques are utilized to create the electrical chargestorage device. However, macroscopic techniques can be employed toachieve the enhanced energy storage and power characteristics, enhancedsurface area moiety and the like. The nanotechniques and macroscopictechniques should be considered illustrative and not limiting. The orderor sequence of the construction of the conductive and dielectric layersmay be accomplished in any order, including contemporaneous constructionof the layers.

[0173] The conductive and dielectric layers of the inventive device maybe fabricated layer by layer, or atom by atom in a macroscopic manner toduplicate the results of the expanded surface area, reduced chargeseparation distance and increased power characteristics.

[0174] In one method of constructing the inventive device, theconductive and dielectric layers are fabricated molecule by molecule. Inanother method of constructing the inventive device, the conductive anddielectric layers are fabricated atom by atom.

[0175] In one method for manufacturing the electrical charge storagedevice, the process includes the steps of constructing at least onefirst conductive layer having a conductive curvilinear surface;constructing at least one second conductive layer having a conductivecurvilinear surface; and constructing at least one dielectric layerdisposed between the first conductive curvilinear surface and the secondconductive curvilinear surface.

[0176] In another method for manufacturing the electrical charge storagedevice, the process includes the steps of constructing a firstconductive layer having a first conductive curvilinear surface;constructing a dielectric layer having opposing first and seconddielectric curvilinear surfaces, the first dielectric curvilinearsurface disposed proximate the first conductive curvilinear surface andsubstantially following the first conductive curvilinear surface acrossits area; and constructing a second conductive layer having a secondconductive curvilinear surface, the second conductive curvilinearsurface disposed adjacent the second dielectric curvilinear surface andsubstantially following the second conductive curvilinear surface acrossits area.

[0177] In another method for manufacturing the electrical charge storagedevice, the process includes the steps of constructing a firstconductive layer having a first conductive smooth, enhanced surface;constructing a dielectric layer having opposing first and seconddielectric surfaces, the first dielectric smooth, enhanced surfacedisposed proximate the first conductive smooth, enhanced surface andsubstantially following the first conductive smooth, enhanced surface;and constructing a second conductive layer having a second conductivesmooth, enhanced surface, the second conductive smooth, enhanced surfacedisposed adjacent the second dielectric surface and substantiallyfollowing the second conductive smooth, enhanced surface.

[0178] In another method for manufacturing the electrical charge storagedevice, the process includes the steps of constructing a firstconductive layer having a first conductive surface; constructing adielectric layer having opposing first and second dielectric surfaces,the first dielectric surface having a substantially conformal surfacewith the first conductive surface; and constructing a second conductivelayer having a second conductive surface disposed adjacent to the seconddielectric surface.

[0179] In another method for manufacturing the electrical charge storagedevice, the process includes the steps of constructing a firstconductive layer having a first conductive surface; constructing adielectric layer having opposing first and second dielectric surfaces,the first dielectric surface substantially maintaining moiety with thefirst conductive surface; and constructing a second conductive layerhaving a second conductive surface disposed adjacent to the seconddielectric surface.

[0180] In another method for manufacturing the electrical charge storagedevice, the process includes the steps of constructing a firstconductive layer having a first conductive surface; constructing adielectric layer having opposing first and second dielectric surfaces,the first dielectric surface having a substantially conformal surfacewith the first conductive surface; and constructing a second conductivelayer having a second conductive surface disposed adjacent to the seconddielectric surface.

[0181] In another method for manufacturing the electrical charge storagedevice, the process includes the steps of constructing a firstconductive layer having a first surface; constructing a dielectric layerhaving opposing first and second dielectric surfaces, the firstdielectric disposed proximate the first surface and substantiallyfollowing the first surface; constructing a second conductive layerhaving a surface, the second conductive surface disposed adjacent thesecond dielectric surface and substantially following the secondsurface; and wherein at least a portion of the first and/or seconddielectric surfaces have sharpy structures.

[0182] In one method of constructing or fabricating the electricalcharge storage device, a dielectric film is deposited.

[0183] In one method of constructing or fabricating the electricalcharge storage device, a porous media is deposited. Within the fluidfilled portion of an electrolytic type electrical charge storage device.The porous media allows ion transport, like a paper layer, and can beviewed similar to a sponge. It wets the layers and allows current flow.Electrochemicals can be employed in these porous media (like in a carbattery, tantalum cap, electrolytic cap, super capacitor, ultracapacitor, fuel cell and the like, i.e., all the PECS devices).

[0184] In one method of constructing or fabricating the electricalcharge storage device, a permeable media is deposited. Within the fluidfilled portion of an electrolytic type electrical charge storage device.The permeable media allows ion transport, like a paper layer, and can beviewed similar to a sponge. It wets the layers and allows current flow.Electrochemicals can be employed in these permeable media (like in a carbattery, tantalum cap, electrolytic cap, super capacitor, ultracapacitor, fuel cell and the like, i.e., all the PECS devices).

[0185] In one method of constructing the electrical charge storagedevice, chemical parameters are controllably varied in time and space inorder to alter device physical structures.

[0186] In one method of constructing the electrical charge storagedevice, a chemical vapor deposition (CVD) process is employed.

[0187] In one method of constructing the electrical charge storagedevice, a plasma enhanced chemical vapor deposition (PECVD) process isemployed.

[0188] In one method of constructing the electrical charge storagedevice, a cure/anneal process is conducted.

[0189] In one method of constructing the electrical charge storagedevice, a source of reactive oxygen is employed.

[0190] In one method of constructing the electrical charge storagedevice, nanomanipulation techniques, equipment and processes are used toconstruct any one of leads, conductors, electrolytes, wetting mechanismsor dielectrics.

[0191] In one method of constructing the electrical charge storagedevice, microscale assembly techniques, equipment and processes are usedto construct any one of the leads, conductors, electrolytes, wettingmechanisms or dielectrics.

[0192] In one method of constructing the electrical charge storagedevice, lithography tools, equipment and processes are used to constructany one of the leads, conductors, electrolytes, wetting mechanisms ordielectrics.

[0193] In one method of constructing the electrical charge storagedevice, etching tools, equipment and processes are used to construct anyone of the leads, conductors, electrolytes, wetting mechanisms ordielectrics.

[0194] In embodiments of constructing the electrical charge storagedevice, one or more of the following may be employed:microelectromechanical devices, at least one microsensor, at least onenanosensor, at least one arrayed probe, at least one arrayed nanotube,at least one electromagnetic field, at least one manipulableelectromagnetic field, and/or at least one nanoelectromechanical device.

[0195] In one method of constructing the electrical charge storagedevice, surface coating is employed.

[0196] In one method of constructing the electrical charge storagedevice, adhesion is employed.

[0197] In one method of constructing the electrical charge storagedevice, controllable variation of adhesive parameters is employed toalter device physical structures.

[0198] In one method of constructing the electrical charge storagedevice, etching tools, equipment and processes are used to constructleads, conductors and dielectrics.

[0199] The following equipment and processes may be employed in theconstruction of the inventive device: i) large scale equipment andprocesses, ii) small scale equipment and processes, iii) micro scaleequipment and processes, or iv) nano scale equipment and processes.

[0200] In one embodiment of the electrical charge storage device, thedevice further includes a wetting mechanism. In another embodiment, atleast one microfluidic channel network is included in the wettingmechanism.

[0201] In one embodiment of the electrical charge storage device, thedevice further includes a wetting mechanism composed of at least onenanotube.

[0202] In one method of constructing the electrical charge storagedevice, a photosensitive substrate is employed.

[0203] In one method of constructing the electrical charge storagedevice, a photosensitive layer is deposited.

[0204] In one method of constructing the electrical charge storagedevice, a photosensitive region is deposited.

[0205] In one method of constructing the electrical charge storagedevice, a mask pattern is employed.

[0206] In one method of constructing the electrical charge storagedevice, an electrode is operably connected to the first and/or secondconductive layer.

[0207] In one method of constructing the electrical charge storagedevice, an electrode is operably connected to a conductive substrate.

[0208] In one method of constructing the electrical charge storagedevice, an electrode is operably connected to a semiconductor.

[0209] In one method of constructing the electrical charge storagedevice, an electrode is operably connected to a dielectric.

[0210] In one method of constructing the electrical charge storagedevice, a probe is employed.

[0211] In one method of constructing the electrical charge storagedevice, a reagent is employed.

[0212] In one method of constructing the electrical charge storagedevice, a wafer is constructed.

[0213] In one method of constructing the electrical charge storagedevice, microfluidic analysis is conducted.

[0214] In one manner of constructing the electrical charge storagedevice, materials are delivered to the device by a nanotube.

[0215] In one manner of constructing the electrical charge storagedevice, materials are delivered to the device by a single layernanotube.

[0216] In one manner of constructing the electrical charge storagedevice, materials are delivered to the device by a multi-layer nanotube.

[0217] In one manner of constructing the electrical charge storagedevice, a laser is employed.

[0218] In one manner of constructing the electrical charge storagedevice, materials are fused to the device by a laser.

[0219] In one manner of constructing the electrical charge storagedevice, any one or more of the following may be used: a microscope, aheat source, or a heat sink.

[0220] In one manner of constructing the electrical charge storagedevice, the materials are monitored via a nanotube.

[0221] In one manner of constructing the electrical charge storagedevice, the materials are manipulated by a nanotube.

[0222] In one manner of constructing the electrical charge storagedevice, the material temperatures are measured.

[0223] In one manner of constructing the electrical charge storagedevice, the material chemical properties are measured.

[0224] In one manner of constructing the electrical charge storagedevice, the material electrical properties are measured.

[0225] In one manner of constructing the electrical charge storagedevice, the material physical properties are measured.

[0226] In one manner of constructing the electrical charge storagedevice, the material quantum properties are measured.

[0227] In one manner of constructing the electrical charge storagedevice, a corrosive process is employed.

[0228] In one manner of constructing the electrical charge storagedevice, an etching process is employed.

[0229] In one manner of constructing the electrical charge storagedevice, the conductive layers and dielectric layers are incorporatedwithin a printed circuit board.

[0230] In one manner of constructing the electrical charge storagedevice, the conductive layers and dielectric layers are incorporatedwithin an integrated circuit.

[0231] In one manner of constructing the electrical charge storagedevice, the conductive layers and dielectric layers are i) enclosed in apackage, or ii) encapsulated.

[0232] In one manner of constructing the electrical charge storagedevice, the conductive layers and an electrolyte are enclosed in apackage.

[0233] In one manner of constructing the electrical charge storagedevice, the device is enclosed in a metal package, in a plastic package,in a silicon based package, in a carbon-based package, or in a ceramicpackage.

[0234] In at least one construction method for the electrical chargestorage device, the process includes growing microscopic structures suchas: crystals, mats, filter mats, beds, webs and particle clouds.

[0235] The inventive device may be built in any suitable form, such asflat, cylindrical, spherical or other than flat form.

[0236] The inventive device may be constructed in one form such as flatand subsequently rolled or processed into any other suitable form, suchas flat, cylindrical, spherical or other than flat form.

[0237] Packaging of the Inventive Device

[0238] Once the inventive devices are constructed or fabricated, thedevice may be rolled, especially if in flat form, for final packagingpurposes. The one or more inventive devices may stored or housed inpackaging containers. The packaging containers may be cylindrical,annular section, rectangular parallelepiped, as well as other containershapes. The containers may be water proof, pressure rated, or vibrationmounted (shock mounted).

[0239] Electrical Charge Storage Device with Smooth Cap with VilliformSmall Structures

[0240] In one implementation of the instant invention a smooth overallstructure with villiform microstructure is constructed. The overallmechanical strength of the smooth overall structure is maintained. Inthe realm of the small, sharp bristles are introduced. These bristlesconstructed for strength and surface area increase serve to distributeand accumulate great charge concentrations. Consider a large smoothmountain. Each gentle slope curves ever so slightly. There are ups anddowns, valleys, crest, plateaus and summit. Each spot on this mountaincan be easily traveled; north, east, west or south. One can ascend,descend or traverse with almost equal effort. But wait, let usinvestigate closer. The green carpet of grass catches our eye. Uponcloser observation the apparently smooth mountain structure isinterrupted at the smallest level. The stems and leaves of grassinterrupt the continuity and smoothness of our alpine meadow. The grassseeks maximum solar exposure for energy uptake. The little sprigs ofgrass have not reduced the strength of the mountain, yet the sprigs havemassively increased the mountainous surface area.

[0241] In one implementation of the instant invention a smooth overallstructure with villiform nanostructure is constructed. Scarlet O'Hare inGone with the Wind visits Rhett Butler in a velvet dress, recycled fromdrapery. As above at the tiniest level, noticed only by the lovestricken pair the smooth lines of the starlet's figure are abruptlydisrupted by the pile of velvet. The extreme villocity of the velvetdoes not reduce the allure of Miss Leigh to Mr. Gable. In fact the softvelvet pile exudes a power all its own. The tiny but visible bristlescreate a depth unmatched by most other fabrics. In a similar manner, thevillous nanostructure provide a strong mechanical structure for chargeaccumulation, fault conditions and voltage strength for the capacitorsof the present invention.

[0242] In one implementation of the electrical charge storage device,the conductive and dielectric layers are constructed with a smoothoverall structure with villiform microstructure having villiformnanostructure. High mechanical strength and effective dielectricstrength are maintained. A high surface area and thus high chargeconcentration and accumulation is achieved by employing a sharpytopology. The various forces, torques, stresses and thermal activity,characterized by high voltage and high current conditions are thusencountered without significant capacitor degradation.

[0243] Electrical Charge Storage Device with Sharpy Structures

[0244] Another aspect of the electrical charge storage device is anelectrical storage device having sharpy structures. In one embodiment,there is an electrical charge storage device having sharpy structures onat least a portion of the conductive and/or dielectric layers of thedevice.

[0245] In one embodiment, there is an electrical charge storage devicethat has a first conductive layer having a first surface; a dielectriclayer having opposing first and second dielectric surfaces, the firstdielectric disposed proximate the first surface and substantiallyfollowing the first surface; a second conductive layer having a surface,the second conductive surface disposed adjacent the second dielectricsurface and substantially following the second surface; wherein at leasta portion of the first and/or second dielectric surfaces have sharpystructures.

[0246] In one embodiment of the electrical charge storage device, thestorage device includes a first conductive layer having a first surfaceand a dielectric layer having opposing first and second dielectricsurfaces. The conductive layer first surface is disposed proximate tothe first surface of the dielectric layer and substantially follows thedielectric surface. The device also includes a second conductive layerhaving a surface, the second conductive surface disposed adjacent to thesecond dielectric surface and substantially following the seconddielectric surface.

[0247] One aspect of the device is at least a portion of the firstand/or second conductive surfaces have sharpy structures. Additionally,at least a portion of the first or second dielectric surfaces may alsohave sharpy structures. Without limitation, some of these structuresinclude dendrite structures, such as a substantially tree and leafstructure, a substantially nerve-like structure, a substantially asynapse-like structure, or a substantially a blood vessel andcapillary-like structure.

[0248] In one implementation of the electrical charge storage device,the conductive and dielectric layers are constructed with a smoothoverall structure with dendrite, Fresnel, tree and leaf and other highangular construction. Interwoven, insulated random tangles of conductors(like a sack full of snakes or a colander full of spaghetti). Thesevarious structures provide for increased power characteristics.

[0249] In one implementation of the electrical charge storage device,the surface area of the capacitor is expanded by the use of sharpystructures.

[0250] In one implementation of the electrical charge storage device,electrical charge storage density is increased by the use of sharpystructures.

[0251] In one implementation of the electrical charge storage device,the total charge density of the capacitor is increased by the use ofsharpy structures.

[0252] In one implementation of the electrical charge storage device,the instantaneous current capability of the capacitor is increased bythe use of sharpy structures.

[0253] In one implementation of the electrical charge storage device,the charge accumulation rate of the capacitor is enhanced by the use ofsharpy structures.

[0254] In one implementation of the electrical charge storage device,repulsive forces are countered by the use of adhesion.

[0255] In one implementation of the electrical charge storage device,entropy is countered by the use of adhesion.

[0256] In one implementation of the inventive capacitor materials aremaintained in place by the use of adhesion.

[0257] In one implementation of the inventive capacitor materials arebrought together by the use of adhesion.

[0258] In one aspect of the invention the moiety between the dielectriclayers and the conductive layer promote cooling of the inventivecapacitor.

[0259] It should be noted that although a summary of most of theembodiments of the present invention are described above, otherembodiments are set forth in the claims. Those embodiments included byreference in the summary of the invention.

[0260] The foregoing has outlined rather broadly the features andtechnical advantages of the present invention in order that the detaileddescription of the invention that follows may be better understood.Additional features and advantages of the invention will be describedhereinafter which form the subject of the claims of the invention. Itshould be appreciated by those skilled in the art that the conceptionand specific embodiment disclosed may be readily utilized as a basis formodifying or designing other structures for carrying out the samepurposes of the present invention. It should also be realized by thoseskilled in the art that such equivalent constructions do not depart fromthe spirit and scope of the invention as set forth in the appendedclaims. The novel features which are believed to be characteristic ofthe invention, both as to its organization and method of operation,together with further objects and advantages will be better understoodfrom the following description when considered in connection with theaccompanying figures. It is to be expressly understood, however, thateach of the figures is provided for the purpose of illustration anddescription only and is not intended as a definition of the limits ofthe present invention.

BRIEF DESCRIPTION OF THE DRAWINGS

[0261] For a more complete understanding of the present invention,reference is now made to the following descriptions taken in conjunctionwith the accompanying drawing, in which:

[0262]FIG. 1 shows an instantaneous charge accumulation on the conductorplates of a generalized capacitor having a planar surface for theconductive layers;

[0263]FIG. 2 represents a magnified cross-sectional view of an exemplaryembodiment of a prior art polarized electrolytic capacitor havingconductor foils;

[0264]FIG. 3 illustrates a smooth two dimensional figure;

[0265]FIG. 4 illustrates a smooth three dimensional structure;

[0266]FIG. 5 illustrates moiety showing that the top and bottomstructures are conformal;

[0267]FIG. 6 illustrates the relative relationship between theelectrical energy storage characteristics and the power transfer aspectsof the technology;

[0268]FIG. 7 illustrates a construction method whereby the count ofconductive layers is reduced in a parallel capacitor assembly;

[0269]FIG. 8 illustrates a construction method whereby the count ofconductive layers and interconnections is reduced in a series capacitorassembly;

[0270]FIG. 9A-9B illustrates a construction method whereby the count ofconductive layers and interconnections is reduced in an anti-seriescapacitor assembly;

[0271]FIG. 10 illustrates a arbitrary scale capacitor design withincreased surface area;

[0272]FIG. 11 illustrates a nanostructure with high angularity;

[0273]FIG. 12 illustrates an expanded surface area having a sinusoidaltopology; and

[0274]FIG. 13 illustrates an expanded surface area region where thepeaks and valleys are rectangular parallelelopiped in nature, exhibitinga unit saw tooth or pyramidal topology.

DETAILED DESCRIPTION OF THE INVENTION

[0275] Capacitors are generally described mathematically by thoseknowledgeable in the field. There are several systems of units andconversions which are commonly employed. It is not uncommon to jump backand forth among systems. The basic physical and mathematical definitionsand relationships are as follows, using the passive sign circuitconvention, where applicable:

[0276] Q=8.9874×10⁹ Nm²C_(ou) ² (Unit of Charge, the Coulomb)

[0277] E0=8.854×10¹² C_(ou) ²/NM² (Permittivity of Free Space)

[0278] C=Q/V

[0279] v=(1/C) Σidt+vt₀ (Summation or Integral from t₀ until t_(f))

[0280] i=C dv/dt

[0281] p=vi=Cv dv/dt

[0282] w=Cv²/2

[0283] C=E₀ E_(R) (A/d) (Parallel Plate Capacitor Geometry)

[0284] Capacitors are characterized by certain qualitative circuitactions and reactions. This circuit behavior is summarized by thefollowing heuristics: i) capacitors will permit an instantaneous changein terminal current, ii) capacitors will oppose an instantaneous changein terminal voltage, and iii) charged capacitors appear as an opencircuit to constant (DC) voltages.

[0285]FIG. 3 illustrates a smooth two dimensional figure. The surface ofthe one or more conductive layers may be formed with a smooth surface.Additionally, the dielectric layer may be formed in with a similarsmooth surface. One mathematical model for a two dimensional, smoothfigure is the sine wave. The smooth valleys 31 and peaks 33 can bephysically extended into several smooth, three dimensional surfaces asfurther described below and show in FIG. 4. For example, the drawing canbe considered a side view of a smooth, three dimensional, channel orhill and valley structure.

[0286]FIG. 4 illustrates a smooth three dimensional structure that maybe utilized for the present invention. This structure can be considereda valley 31 and peaks 33 structure or a sine wave or similar undulationlinearly extended in a planar surface. So long as the gradient variationis gradual the structure can be considered smooth. Gradual changes inslope of the surface may be made.

[0287]FIG. 5 illustrates the concept of moiety between layers. The topand bottom structures are conformal. FIG. 5 is shown emphasized with adistance separation between the top 41 and bottom 43 halves. Asillustrated in the figure, the surfaces maintaining moiety with betweenthe first surface 45 and the second surface 47. In certain embodimentsof the present invention, the conductive layer maintains moiety withdielectric layer.

[0288]FIG. 6 illustrates one of the many objects of the electricalcharge storage device, one object to enhance power characteristics ofelectrical charge storage devices. FIG. 6 is meant to be illustrativeand not limiting. FIG. 6 shows the relative relationship between theelectrical energy storage characteristics and the power transfer aspectsof the inventive electrical charge storage device. The figureillustrates Energy 61 on the y-axis and Power 62 on the x-axis. The boxentitled “area of interest” shows generally where one implementation ofthe inventive technology lies in comparison to other presently availabletechnology. The “area of interest” box 67 is believed to show the regionof the energy to power graph where the inventive electrical chargestorage device resides in comparison to other existing technology. Asshown significant variation exists among each technology. For examplelead calcium batteries 63 may be of the deep cycle type, having highenergy storage design. An identical Amp Hour starting battery on theother hand will not store the total quantity of energy, but can providesignificantly greater instantaneous power. Similarly there are varioussymmetrical and asymmetrical super and ultra capacitor designs 64 whichhave widely divergent energy density and power density profiles.Further, tantalum capacitors 65 have various power and energycharacteristics. A non-polarized capacitor 66 may have good powercharacteristics, but low energy storage. The electrical charge storagedevice exhibits increases in power and energy over the existingtechnology.

[0289]FIG. 7 illustrates a construction method whereby the count ofconductive layers is reduced in a parallel capacitor assembly. Reducingconductor count is an object of this invention.

[0290]FIG. 8 illustrates a construction method whereby the count ofconductive layers and interconnections is reduced in a series capacitorassembly.

[0291]FIGS. 9A and 9B illustrate a construction method whereby the countof conductive layers and interconnections is reduced in an anti-seriescapacitor assembly. This technique can be employed in the use offorwardly biased, polarized capacitors in continuous AC applications.

[0292]FIG. 10 illustrates an arbitrary scale capacitor design withincreased surface area. This type gross structure serves to increasevolume charge storage. FIG. 10 exhibits some high angularities and canbe considered a sharpy structure.

[0293]FIG. 11 illustrates a structure with high angularity: In certainembodiments the inventive electrical charge storage device utilizes adendrite structure which tends to maximize the charge accumulation andenergy storage. Dendrite structures include tree and leaf, nerve andsynapse, blood vessel and capillary. Such sharpy structures are suitablefor high energy density capacitors.

[0294]FIG. 12 illustrates an expanded surface area where Z=ASin(bX)Sin(bY), a sinusoidal topology. In certain embodiments, theconductive and dielectric layers utilize curvilinear surfaces. For thecase of a continuous simple mathematical surface such asZ=A[Sin(bX)Sin(bY)] the integral can be derived exactly. The surfacearea increase of the above surface is a function of the Amplitude A andthe Period of bX and bY. In this figure, the period of bX and bY areidentical. An object having a smooth curvilinear surface such as this,in which a conformal dielectric and second conformal conductive layer,can be shown to have great physical strength relative to the brittlestructures present in electrolytic capacitors. The line integral(length) of a unit sinusoid over the period has a length of 2π. Thus thesurface integral for the sinusoidal unit structure is 4π². The moregeneral case of Z as shown above includes the constants A and b. Thesurface area would increase in direct proportion with the magnitude ofthe constant A, and increase in inverse proportion to the constant b dueto the mathematical properties of surface integrals. This surface areaincrease is physically analogous to the increase in energy withincreases in wave magnitude and decreases in wavelength (increasingfrequency). The Z=A Sin(bX)Sin(bY) a sinusoidal topology is smooth andcan exhibit significant physical strength due to the conductors. Astrongly bonded, physically strong, conformal dielectric will fill theseparating space, providing significant mechanical support. A dielectricwith good heat transfer characteristics and heat durability, such as thecrystalline form of carbon (diamond) will allow a large displacementcurrent. The conformal layer topology provides for the shortest distancefor charge displacement within the dielectric to be an orthogonal pathfrom conductor to conductor at each point of the curvilinear surfaces.Thus material strength, topology, and thermodynamic properties combinewith dielectric constant and dielectric strength to determine theallowable transient and steady state current densities for a capacitor.Where structure dimensions are large relative to the atoms and moleculesinvolved, a close approximation to uniform, conformal coating can bemaintained.

[0295]FIG. 13 illustrates an expanded surface area region where thepeaks and valleys are rectangular parallelelopiped in nature, exhibitinga unit saw tooth or pyramidal topology. In certain embodiments of theelectrical charge storage device, conductive and dielectric surfaceshave expanded surface regions. The line integral of a saw tooth 2D curveis 4, while the surface area of the 3D surface is six (6): Thus the 3Dsaw tooth topology exhibits six times the surface area of a flat surfacebut significantly less surface area than the sinusoidal topology. Thisshape can be described as tilted square box halves, slightly displaced.The topology structure of FIG. 13 exhibits significant physical strengthcombined with an increase in surface area. As in the case of thesinusoidal topology above, the pyramidal structure will increase insurface area with increasing amplitude and frequency. Also, thedisplacement current vector generally retains the orthogonal andshortest route characteristic of the sinusoidal structure above. Therelatively straight realizable surfaces and edges are consistent withcrystalline and polycrystalline growth structures.

[0296] All patents and publications mentioned in the specification areindicative of the level of those skilled in the art to which theinvention pertains. All patents and publications are herein incorporatedby reference to the same extent as if each individual publication wasspecifically and individually indicated to be incorporated by reference.

[0297] United States Patent Documents:

[0298] U.S. Pat. No. 5,362,526, entitled “Plasma-Enhanced CVD ProcessUsing TEOS for Depositing Silicon Oxide”, which is incorporated byreference herein.

[0299] U.S. Pat. No. 5,876,787, entitled “process of manufacturing aporous carbon material and capacitor having the same”, Avarbz et al,1999

[0300] U.S. Pat. No. 5,081,559, entitled “enclosed ferroelectric stackedcapacitor”, Fazan et al, 1992

[0301] Published United States Patent Applications:

[0302] US PTO 20020017893 W. B. Duff, Jr. Published Feb. 14, 2002 Methodand Circuit For Using Polarized Device In AC Applications

[0303] US PTO 20030006738 W. B. Duff, Jr. Published Jan. 9, 2003 Methodand Circuit For Using Polarized Device In AC Applications

[0304] Non-provisional U.S. application Ser. No. 09/170,998, entitled“Method and Circuit for Using Polarized Device in AC Applications,”filed Nov. 9, 2000, which claims the benefit of provisional ApplicationSerial No. 60/174,433, entitled “Method and Circuit for Using PolarizedDevice in AC Applications,” filed: Jan. 4, 2000.

[0305] USPTO 20030010910 Colbert, Daniel T., et al Published Jan. 9,2003 Continuous Fiber of Single Wall Carbon Nanotubes

[0306] Other References:

[0307] Solid State Electronic Devices, 3^(rd) Edition, Ben G. Streetman,Prentice-Hall, Englewood Cliffs, N.J., 1990.

[0308] Economic AC Capacitors, W. B. Duff, Jr., IEEE Power EngineeringReview, Volume 22, Number 1, January 2002, The Institute of Electricaland Electronics Engineers, NY N.Y.

[0309] Although the present invention and its advantages have beendescribed in detail, it should be understood that various changes,substitutions and alterations can be made herein without departing fromthe spirit and scope of the invention as defined by the appended claims.Moreover, the scope of the present application is not intended to belimited to the particular embodiments of the process, machine,manufacture, composition of matter, means, methods and steps describedin the specification. As one of ordinary skill in the art will readilyappreciate from the disclosure of the present invention, processes,machines, manufacture, compositions of matter, means, methods, or steps,presently existing or later to be developed that perform substantiallythe same function or achieve substantially the same result as thecorresponding embodiments described herein may be utilized according tothe present invention. Accordingly, the appended claims are intended toinclude within their scope such processes, machines, manufacture,compositions of matter, means, methods, or steps.

What is claimed is:
 1. An electrical charge storage device, comprising:at least one first conductive layer having a conductive curvilinearsurface; at least one second conductive layer having a conductivecurvilinear surface; and at least one dielectric layer disposed betweenthe first conductive curvilinear surface and the second conductivecurvilinear surface.
 2. The electrical charge storage device as recitedin claim 1, wherein the dielectric layer has opposing first and seconddielectric curvilinear surfaces, the first dielectric curvilinearsurface is disposed proximate the first conductive curvilinear surfaceand substantially following the first conductive curvilinear surfaceacross its area.
 3. The electrical charge storage device as recited inany one of claims 1 or 2 a second conductive layer having a secondconductive curvilinear surface, the second conductive curvilinearsurface disposed adjacent the second dielectric curvilinear surface andsubstantially following the second conductive curvilinear surface acrossits area.
 4. The electrical charge storage device as recited in any oneof claims 1 or 2, wherein the first conductive surface and firstdielectric surface are substantially conformal.
 5. The electrical chargestorage device as recited in any one of claims 1 or 2, wherein thesecond conductive surface and second dielectric surface aresubstantially conformal.
 6. The electrical charge storage device asrecited in any one of claims 1 and 2, wherein the first conductivesurface substantially maintains moiety with the first dielectricsurface.
 7. The electrical charge storage device as recited in any oneof claims 1 and 2, wherein the second conductive surface substantiallymaintains moiety with the second dielectric surface.
 8. The electricalcharge storage device as recited in any one of claims 1 and 2, whereinat least 2% of the first conductive surface area being substantiallyconformal with an area of the first dielectric surface.
 9. Theelectrical charge storage device as recited in any one of claims 1 and2, wherein at least 2% of the first conductive surface areasubstantially maintains moiety with an area of the first dielectricsurface.
 10. The electrical charge storage device as recited in any oneof claims 8-9, wherein the first conductive surface area being disposedat a substantially uniform distance from the first dielectric surfacearea.
 11. The electrical charge storage device as recited in any one ofclaims 8-10 wherein the first conductive surface area being disposed ata selected distance ranging from 0.0001 μm to 2000 μm from the firstdielectric surface area, said selected distance varying within aselectable tolerance.
 12. The electrical charge storage device asrecited in any one of claims 1 and 2, wherein at least 2% of the secondconductive surface area being substantially conformal with an area ofthe second dielectric surface.
 13. The electrical charge storage deviceas recited in any one of claims 1 and 2, wherein at least 2% of thesecond conductive surface area substantially maintains moiety with anarea of the second dielectric surface.
 14. The electrical charge storagedevice as recited in any one of claims 12-13, wherein the secondconductive surface area being disposed is at a substantially uniformdistance from the second dielectric surface area.
 15. The electricalcharge storage device as recited in any one of claims 12-14, wherein thesecond conductive surface area being disposed at a selected distanceranging from 0.0001 μm to 2000 μm from the second dielectric surfacearea, said selected distance varying within a selectable tolerance. 16.The electrical charge storage device as recited in any one of claims 1and 2, wherein each of the first and the second conductive curvilinearsurfaces and the dielectric curvilinear surface have a substantiallysmooth structure.
 17. The electrical charge storage device as recited inclaim 16, wherein each of the first and the second conductivecurvilinear surfaces and the dielectric curvilinear surface comprises avillous structure formed on at least a portion of the smooth structureof any of the surfaces, the villous structure having a small scalerelative to the smooth structure.
 18. The electrical charge storagedevice as recited in claims 16, wherein each of the first and the secondconductive curvilinear surfaces and the dielectric curvilinear surfacecomprises a dendritic structure formed on at least a portion of thesmooth structure of any of the surfaces, the dendritic structure havinga small scale relative to the smooth structure.
 19. An electrical chargestorage device, comprising: a first conductive layer having a firstconductive smooth, enhanced surface; a dielectric layer having opposingfirst and second dielectric surfaces, the first dielectric smooth,enhanced surface disposed proximate the first conductive smooth,enhanced surface and substantially following the first conductivesmooth, enhanced surface; and a second conductive layer having a secondconductive smooth, enhanced surface, the second conductive smooth,enhanced surface disposed adjacent the second dielectric surface andsubstantially following the second conductive smooth, enhanced surface.20. The electrical charge storage device as recited in claim 19, whereinthe first dielectric smooth, enhanced surface disposed proximate thefirst conductive smooth, enhanced surface and substantially followingthe first conductive smooth, enhanced surface.
 21. The electrical chargestorage device as recited in any one of claims 19 and 20, wherein thefirst conductive surface and first dielectric surface are substantiallyconformal.
 22. The electrical charge storage device as recited in anyone of claims 19 and 20, wherein the second conductive surface andsecond dielectric surface are substantially conformal.
 23. Theelectrical charge storage device as recited in any one of claims 19 and20, wherein the first conductive surface substantially maintains moietywith the first dielectric surface.
 24. The electrical charge storagedevice as recited in any one of claims 19 and 20, wherein the secondconductive surface substantially maintains moiety with the seconddielectric surface.
 25. The electrical charge storage device as recitedin any one of claims 19 and 20, wherein at least 2% of the firstconductive surface area being substantially conformal with an area ofthe first dielectric surface.
 26. The electrical charge storage deviceas recited in any one of claims 19 and 20, wherein at least 2% of thefirst conductive surface area substantially maintains moiety with anarea of the first dielectric surface.
 27. The electrical charge storagedevice as recited in any one of claims 25 and 26, wherein the firstconductive surface area being disposed at a substantially uniformdistance from the first dielectric surface area.
 28. The electricalcharge storage device as recited in any one of claims 25 and 26, whereinthe first conductive surface area being disposed at a selected distanceranging from 0.0001 μm to 2000 μm from the first dielectric surfacearea, said selected distance varying within a selectable tolerance. 29.The electrical charge storage device as recited in any one of claims 19and 20, wherein at least 2% of the second conductive surface area beingsubstantially conformal with an area of the second dielectric surface.30. The electrical charge storage device as recited in any one of claims19 and 20, wherein at least 2% of the second conductive surface areasubstantially maintains moiety with an area of the second dielectricsurface.
 31. The electrical charge storage device as recited in any oneof claims 29 and 30, wherein the second conductive surface area beingdisposed at a substantially uniform distance from the second dielectricsurface area.
 32. The electrical charge storage device as recited in anyone of claims 19 and 20, wherein each of the first and the secondconductive smooth, enhanced surfaces and the dielectric smooth enhancedsurface have a substantially smooth structure.
 33. The electrical chargestorage device as recited in claim 32, wherein each of the first and thesecond conductive smooth enhanced surfaces and the dielectric smoothenhanced surface comprises a villous structure formed on at least aportion of the smooth structure on any of the surfaces, the villousstructure having a small scale relative to the smooth structure.
 34. Theelectrical charge storage device as recited in claim 32, wherein each ofthe first and the second conductive smooth enhanced surfaces and thedielectric conductive smooth enhanced surfaces comprises a dendriticstructure formed on at least a portion of the smooth structure on any ofthe surfaces, the dendritic structure having a small scale relative tothe smooth structure.
 35. An electrical charge storage device,comprising: at least one first conductive layer having a shapedtopographical surface; at least one second conductive layer having aconductive shaped topographical surface; and at least one dielectriclayer disposed between the first conductive shaped topographical surfaceand the second conductive topographical surface.
 36. The electricalcharge storage device as recited in claim 35, wherein the dielectriclayer has opposing first and second dielectric topographical surfaces,the first dielectric topographical surface is disposed proximate thefirst conductive topographical surface and substantially following thefirst conductive topographical surface across its area.
 37. Theelectrical charge storage device as recited in any one of claims 35 and36, wherein the first conductive surface and first dielectric surfaceare substantially conformal.
 38. The electrical charge storage device asrecited in any one of claims 35 and 36, wherein the second conductivesurface and second dielectric surface are substantially conformal. 39.The electrical charge storage device as recited in any one of claims 35and 36, wherein the first conductive surface substantially maintainsmoiety with the first dielectric surface.
 40. The electrical chargestorage device as recited in any one of claims 35 and 36, wherein thesecond conductive surface substantially maintains moiety with the seconddielectric surface.
 41. The electrical charge storage device as recitedin any one of claims 35 and 36, wherein at least 2% of the area of thefirst conductive surface has a shaped topographical surface, said 2%area defining a smooth structure.
 42. The electrical charge storagedevice as recited in any one of claims 35 and 36, wherein at least 2% ofarea of the second conductive surface has a shaped topographicalsurface, said 2% area defining a smooth structure.
 43. The electricalcharge storage device as recited in any one of claims 41-42, wherein atleast 2% of the area of the first dielectric surface has a shapedtopographical surface, said 2% area defining a smooth structure.
 44. Theelectrical charge storage device as recited in any one of claims 41-42,wherein at least 2% of area of the second dielectric surface has ashaped topographical surface, said 2% area defining a smooth structure.45. The electrical charge storage device as recited in any one of claims41-42, wherein at least 2% of the first conductive surface area beingsubstantially conformal with an area of the first dielectric surface.46. The electrical charge storage device as recited in any one of claims41-42, wherein at least 2% of the first conductive surface areasubstantially maintains moiety with an area of the first dielectricsurface.
 47. The electrical charge storage device as recited in any oneof claims 43-46, wherein the first conductive surface area beingdisposed at a substantially uniform distance from the first dielectricsurface area.
 48. The electrical charge storage device as recited in anyone of claims 43-47, wherein the first conductive surface area beingdisposed at a selected distance ranging from 0.0001 μm to 2000 μm fromthe first dielectric surface area, said selected distance varying withina selectable tolerance.
 49. The electrical charge storage device asrecited in any one of claims 41 and 42, wherein at least 2% of thesecond conductive surface area being substantially conformal with anarea of the second dielectric surface.
 50. The electrical charge storagedevice as recited in any one of claims 41 and 42, wherein at least 2% ofthe second conductive surface area substantially maintains moiety withan area of the second dielectric surface.
 51. The electrical chargestorage device as recited in any one of claims 49 and 50, wherein thesecond conductive surface area being disposed at a substantially uniformdistance from the second dielectric surface area.
 52. The electricalcharge storage device as recited in any one of claims 49-51, wherein thesecond conductive surface area being disposed at a selected distanceranging from 0.0001 μm to 2000 μm from the second dielectric surfacearea, said selected distance varying within a selectable tolerance. 53.The electrical charge storage device as recited in any one of claims 41and 42, wherein each of the first and the second conductive surfaces andthe dielectric surface have a substantially smooth structure.
 54. Theelectrical charge storage device as recited in claim 53, wherein each ofthe first and the second conductive surfaces and the dielectric surfacecomprises a villous structure formed on at least a portion of the smoothstructure of any of the surfaces, the villous structure having a smallscale relative to the smooth structure.
 55. The electrical chargestorage device as recited in claims 53, wherein each of the first andthe second conductive surfaces and the dielectric surface comprises adendritic structure formed on at least a portion of the smooth structureof any of the surfaces, the dendritic structure having a small scalerelative to the smooth structure.
 56. The electrical charge storagedevice of any one of claims 16-18, 32-34, 41-44, and 53-55 wherein atleast a portion of the smooth structure has a repeating pattern.
 57. Theelectrical charge storage device of any one of claims 16-18, 32-34,41-44, and 53-55 wherein at least a portion of the smooth structure ofthe first and/or second conductive layer has an area that is alveolar inshape, sinusoidal rows in shape, parabolic in shape, inverted in shape,everted in shape, concave in shape, convex in shape, spiral in shape,random swirl in shape, quasi-random swirl in shape, mathematicallydefined as (A)sin(bX)sin(bY), mathematically defined as parabolic,mathematically defined as conical, tubular in shape, annular in shape,or toroidal in shape, or embedded in a permeable vertical fashion. 58.The electrical charge storage device of any one of claims 16-18, 32-34,41-44, and 53-55 wherein at least a portion of the smooth structure ofthe dielectric layer has an area that is alveolar in shape, sinusoidalrows in shape, parabolic in shape, inverted in shape, everted in shape,concave in shape, convex in shape, spiral in shape, random swirl inshape, quasi-random swirl in shape, mathematically defined as(A)sin(bX)sin(bY), mathematically defined as parabolic, mathematicallydefined as conical, tubular in shape, annular in shape, toroidal inshape, or embedded in a permeable vertical fashion.
 59. An electricalcharge storage device, comprising: a first conductive layer having afirst surface; a dielectric layer having opposing first and seconddielectric surfaces, the first dielectric disposed proximate the firstsurface and substantially following the first surface; a secondconductive layer having a surface, the second conductive surfacedisposed adjacent the second dielectric surface and substantiallyfollowing the second surface; and wherein at least a portion of thefirst and/or second dielectric surfaces have sharpy structures.
 60. Theelectrical charge storage device of claim 59, wherein at least 2% of thesurface area of the first and/or second dielectric layer have sharpystructures.
 61. The electrical charge storage device according to anyone of claims 59-60, wherein the similar shapes of sharpy structures arerepetitively patterned across the at least 2% surface area.
 62. Theelectrical charge storage device according to any one of claims 59-60,wherein the different shapes of sharpy structures are repetitivelypatterned across the at least 2% surface area.
 63. The electrical chargestorage device of claim 59-62, wherein at least a portion of the firstand/or second conductive surfaces has sharpy structures.
 64. Theelectrical charge storage device as recited in any one of claims 59-63,wherein the sharpy structure is a dendrite structure.
 65. The electricalcharge storage device as recited in claim 64, wherein the dendritestructure is a substantially tree and leaf structure, a substantiallynerve-like structure, a substantially a synapse-like structure, or asubstantially a blood vessel and capillary-like structure.